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By Davisson C. J.

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For this reason, such materials have been called “p‐type” organic semiconductors. The realization of “n‐type” organic FETs usually involved the synthesis of special organic semiconductors with high electron affinities, comprising specific electron withdrawing groups. These were then called “n‐type” organic semiconductors. In recent years, it has become clear that the chemical structure of the organic semiconductor is not the only factor that determines whether an organic FET exhibits predominantly p‐channel or n‐channel behavior.

916. ] needed to manufacture conventional electronic circuits based on silicon. If successful, the low‐cost fabrication processes will ultimately result in the “printing” of large‐area organic electronic circuits using roll‐to‐roll methods, where low‐temperature deposition of the organics is followed by metal deposition and patterning in a continuous, high‐speed process. 9, a conceptual diagram of continuous and very low cost manufacture of organic electronic devices is reported. Starting with a roll of plastic substrate, the organic materials forming the device active regions are first deposited from either the liquid or vapor phase, and then, an unpatterned metal layer that works as “strike layer” is deposited.

Remmers, C. Poga, M. Hopmeier, and R. Mahrt, Chem. Phys. 1998, 227, 167. [95] G. J. Horowitz, Mater. Res. 2004, 19, 1946. [96] W. W. A. Koopman, S. Toffanin, M. Natali, S. Troisi, R. Capelli,V.  Stefani, and M. Muccini, Nano Lett. 2014, 14, 1695. [97] J. Zaumseil, C. L. ‐S. Kim, R. H. Friend, and H. Sirringhaus, Adv. Mater. 2006, 18, 2708. [98] T. Takenobu, S. Birsi, T. Takahashi, M. Yahiro, C. Adachi, and Y. Iwasa, Phys. Rev. Lett. 2008, 100, 15. [99] H. Yamamoto, T. Oyamada, H. Sasabe, and C.

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