By L. L. Bonilla (auth.), Dr. Franz-Josef Niedernostheide (eds.)
Nonlinear Dynamics and trend Formation in Semiconductors and units is focused on primary methods of self-organization and electric instabilities to teach the correlations among them. top specialists provide a survey of modern experimental observations about the spatiotemporal behaviour of dissipative constructions in a variety of semiconductor and current theoretical approches to difficulties of self-organization and the elemental thoughts of dynamical constructions. to attach the sector of semiconductor physics with the idea of nonequilibrium dissipative platforms, the emphasis lies at the examine of localized buildings, their balance and bifurcation behaviour. some degree of detailed curiosity is the evolution of dynamic buildings and the research of extra advanced buildings coming up from interactions among those buildings. past that, attainable purposes of nonlinear results and self-organization phenomena with appreciate to sign processing, sensors, and neural networks are discussed.
Read or Download Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices: Proceedings of a Symposium Organized Along with the International Conference on Nonlinear Dynamics and Pattern Formation in the Natural Environment Noordwijkerhout, The Netherlands, J PDF
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Extra resources for Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices: Proceedings of a Symposium Organized Along with the International Conference on Nonlinear Dynamics and Pattern Formation in the Natural Environment Noordwijkerhout, The Netherlands, J
2 Static Characteristic = = We consider a superlattice with 40 periods of I 90 A and b 15 A. 005 ps. 1 meV. 10 14 cm- 3 we obtain a homogeneous field distribution. The characteristic given in Fig. 14a shows a first maximum at low electric fields due to miniband transport and a pronounced peak at the field where the first and the second level are in resonance. 6 25 (a) 20 § 15 ....... 4 § ~1O ~2 ....... 5 ....... 0 50 1 F [kV/cm] 150 2 0 (b) -- 1 "j, U [V] 4 5 6 Fig. 14. 34· lOa cm- 3 where the field distribution is homogeneous along the sample.
49] J. Spangler, B. Finger, C. Wimmer, W. Eberle, W. Pretti: Semicond. Sci. Technol. 50] H. Kostial, M. Asche, R. Hey, K. Ploog, F. Koch: Jap. J. Appl. 51] B. Kehrer, W. Quade, E. Scholl: Monte Carlo Simulation of Low Temperature Impurity Breakdown and Current Filamentation in c5-doped GaAs, in Proc. nd Int. Con!. Phys. , Vancouver, 1994, ed. by D. J. 52] M. Hirsch, A. Kittel, G. P. Huebener, J. Parisi: Phys. Lett. 53] G. Hupper, E. Scholl, A. Rein: Mod. Phys. Lett. 54] G. Hiipper, K. Pyragas, E.
ConI. Phys. , Vancouver, 1994, ed. J. Lockwood (World Scientific, Singapore), in print F. Prengel: Nichtlinearer Ladungstransport in Halbleiter- Ubergittern. Master's thesis, Technische Universitat Berlin (1994) 3 Space Charge Instabilities and Nonlinear Waves in Extrinsic Semiconductors S. W. J. L. Bonilla 2 1 2 Duke University, Department of Physics and Center for Nonlinear and Complex Systems, Durham NC 27708-0305, USA Universidad Carlos III de Madrid, Escuela Politecnica Superior, Butarque 15, 28911 Leganes, Madrid, Spain Abstract.
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