Download Mechanical stress on the nanoscale : simulation, material by Margrit Hanbücken, Pierre Müller, Ralf B. Wehrspohn PDF

By Margrit Hanbücken, Pierre Müller, Ralf B. Wehrspohn

content material: entrance subject --
basics of tension and pressure at the Nanoscale. Elastic pressure rest: Thermodynamics and Kinetics / Frank Glas --
basics of rigidity and pressure on the Nanoscale point: towards Nanoelasticity / Pierre Muller --
Onset of Plasticity in Crystalline Nanomaterials / Laurent Pizzagalli, Sandrine Brochard, Julien Godet --
Relaxations at the Nanoscale: An Atomistic View by means of Numerical Simulations / Christine Mottet --
version structures with Stress-Engineered homes. lodging of Lattice Misfit in Semiconductor Heterostructure Nanowires / Volker Schmidt, Joerg V Wittemann --
Strained Silicon Nanodevices / Manfred Reiche, Oussama Moutanabbir, Jan Hoentschel, Angelika H̃hnel, Stefan Flachowsky, Ulrich G̲sele, Manfred Horstmann --
Stress-Driven Nanopatterning in metal structures / Vincent Repain, Sylvie Rousset, Shobhana Narasimhan --
Semiconductor Templates for the Fabrication of Nano-Objects / Jo︠l Eymery, Laurence Masson, Houda Sahaf, Margrit Hanbucken --
Characterization innovations of Measuring Stresses at the Nanoscale. pressure research in Transmission Electron Microscopy: How a long way do we pass? / Anne Ponchet, Christophe Gatel, Christian Roucau, Marie-Još Casanove --
decision of Elastic traces utilizing Electron Backscatter Diffraction within the Scanning Electron Microscope / Michael Krause, Matthias Petzold, Ralf B Wehrspohn --
X-Ray Diffraction research of Elastic traces on the Nanoscale / Olivier Thomas, Odile Robach, Sťphanie Escoubas, Jean-Šbastien Micha, Nicolas Vaxelaire, Olivier Perroud --
Diffuse X-Ray Scattering at Low-Dimensional buildings within the procedure SiGe/Si / Michael Hanke --
Direct dimension of Elastic Displacement Modes by way of Grazing prevalence X-Ray Diffraction / Geoffroy Přvot --
Submicrometer-Scale Characterization of sun Silicon via Raman Spectroscopy / Michael Becker, George Sarau, Silke Christiansen --
Strain-Induced Nonlinear Optics in Silicon / Clemens Schriever, Christian Bohley, Ralf B Wehrspohn --

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Additional info for Mechanical stress on the nanoscale : simulation, material systems and characterization techniques

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From a fundamental viewpoint, one of the key features of nanosized material is their high surface/bulk ratio with the consequence that materials in small dimensions behave differently from their bulk counterpart. From a technological viewpoint, nanomaterials are promising building blocks in future devices, but the stresses they develop can be detrimental to their reliability or can be used to modify their physical properties. Thus, for both fundamental and technological applications, there is a growing interest in the study of the mechanics of nanosized objects.

More generally, in elastically anisotropic materials, the shape of inclusions and their relative disposition tend to be determined by elastic relaxation [11]. 4 Elastic Relaxation in the Presence of a Free Surface The presence of a free surface may also deeply affect strain relaxation. In the infinite solid considered so far, the elastic energy of any composition distribution is the sum Ð 0 of those of its Fourier components, which do not interact since V eik Á r eik Á r dr ¼ 0 if k 6¼ k0 . 5). However, this is still true for a planar half-space.

2 Elastic Strain Relaxation If the deposit is much thinner than the substrate, one can safely consider (ignoring possible curvature effects) that only the former is strained while the latter retains its bulk lattice. Moreover, the layer has a free surface z ¼ h, so the substrate/layer interface z ¼ 0 does not entirely surround the layer. 2, it is then not necessary to apply strain ÀeÃij ¼ Àe0 at stage 1 of the Eshelby process. It suffices to apply a strain that restores lattice continuity across the S/L interface, that is, ð1Þ ð1Þ such that exx ¼ eyy ¼ Àe0 .

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