Download HighLinearity CMOS RF FrontEnd Circuits by Yongwang Ding PDF

By Yongwang Ding

This publication offers a few particular strategies to augment the linearity of either the receiver and transmitter. The publication can be utilized as a textbook for graduate classes in RF CMOS layout and also will be important as a reference for the practising engineer.

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Additional info for HighLinearity CMOS RF FrontEnd Circuits

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Non-salicided diffusion resistors are often used for ESD protection due to their high resistance and easy process compatibility with MOSFETs. Polysilicon resistors are often used in integrated circuits for their nearly constant resistance over voltage and temperature. With different doping polysilicon resistors can have a a large range of sheet resistance. A salicide polysilicon resistor has a sheet resistance usually below 10 ohms per square, but a non-salicide polysilicon resistor with counter-dopinghas a sheet resistance over 1K ohms per square.

G. 300 to 500 ohms per square. Because of their nonlinear characteristic over voltage, well resistors are usually used to feed a DC bias voltage, and have to be used with great caution so as to not introduce distortion. g. around 10 ohms per square if salicided and around 100 ohms per square if not salicided. Because of their significant resistance dependence on voltage salicide diffusion resistors are rarely used intentionally, but they exist on every MOSFET as parasitic resistors. Non-salicided diffusion resistors are often used for ESD protection due to their high resistance and easy process compatibility with MOSFETs.

The most accurate simulation tools are 3D electro-magnetic (EM) simulators, such as HFSS and Sonnet. The 3D EM simulators usually require heavy simulation power and long simulation time. 1 7. 5-element spiral inductor model element approximation were also created, such as ASITIC and OEA SPIRAL. The compromised simulators provide a good balance between accuracy and simulation complexity. 3 Modeling A practical on-chip spiral inductor is not a pure inductive component, but a complex structure with inductor, parasitic resistors and parasitic capacitors.

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