By Yogesh Singh Chauhan, Darsen Duane Lu, Vanugopalan Sriramkumar, Sourabh Khandelwal, Juan Pablo Duarte, Navid Payvadosi, Ai Niknejad, Chenming Hu
This booklet is the 1st to provide an explanation for FinFET modeling for IC simulation and the regular – BSIM-CMG - describing the push favourite for advancing the expertise from planar to 3D structure, as now enabled by way of the authorized standard.
The e-book supplies a powerful origin at the physics and operation of FinFET, information features of the BSIM-CMG version comparable to floor strength, cost and present calculations, and encompasses a devoted bankruptcy on parameter extraction strategies, supplying a step by step procedure for the effective extraction of version parameters.
With this publication you'll learn:
- Why you can use FinFET
- The physics and operation of FinFET
- Details of the FinFET commonplace version (BSIM-CMG)
- Parameter extraction in BSIM-CMG
- FinFET circuit layout and simulation
- Authored through the lead inventor and developer of FinFET, and builders of the BSIM-CM regular version, delivering an specialists’ perception into the standards of the standard
- The first publication at the industry-standard FinFET version - BSIM-CMG
Read Online or Download FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard PDF
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Extra info for FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard
Furthermore, when FETs are used as switches, particularly in sampled time systems, the distortion produced by the device is sampled and processed along with the signal. The source of distortion is easy to understand since the I-V characteristics of a FET are described by nonlinear equations of terminal voltages: Ids = f (Vgs , Vds , Vbs ). 19) where lowercase symbols denote AC quantities. The first term, gm1 , is nothing but the transconductance of the device. The curvature of the I-V curve gives rise to higherorder coefficients which describe the deviation of AC from the quiescent operating point for a small deviation of the gate-source voltage about the bias point.
As noted before, gm = gds in the linear region of the transistor operation. One would expect that the thermal noise of a FET varies smoothly as the device bias is varied from strong inversion to weak inversion, with the limits of weakinversion noise given by the well-known shot noise current 2qIds . 13 Excess noise factor γ versus gate bias Vgs . operation, a plot of γ versus Vds should have physical meaning in the saturation regime. To understand the importance of γ , let us derive the noise figure of a commonsource and a common-gate amplifier.
Naturally, the bias dependence of flicker noise should be correctly captured. In a FET, all of the intrinsic noise originates from the channel and traps in the gate-oxide interface. Extrinsic parasitic elements, such as physical resistance in the gate, source, and drain, also contribute noise. Plotting noise parameters versus bias is a good way to tease out the various sources of noise: ones that depend on bias are generally due to intrinsic device noise, and fixed noise contributions are due to extrinsic sources.
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