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By J.T. Wallmark, L.G. Carlstedt

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He used a pn junction gate to eliminate the effect of the surface states. The main advantage of such transistors compared to MOS transistors is their low 1 /f noise. The reason for this is that in an MOS transistor the current flows in a very thin surface layer and is therefore very sensitive to temporary surface charges. In a JFET the current flows in a channel which may be so far away from the surface that its effect is negligible. Such transistors are therefore used primarily in low noise applications.

9, give different results depending on how the voltage VF is selected. 11 ) vr ;;;;. 12, we can see that when the input voltage is low the output voltage is only VF - vr. Why is this? Assume that a small current flows through transistor T 1 and accordingly also in transistor T 2 • The gate-source voltage of transistor T 2 is then very close to the threshold voltage vr. This means that the output voltage Vout is VF - vr. Consequently by varying the voltage VF the output voltage may be varied. However, if the voltage VF is continuously increased the output voltage finally reaches the supply voltage, vc.

Since in an MOS transistor the drain current decreases or increases only slightly with temperature, thermal runaway as in the bipolar transistor does not occur. For the same reason, and because the MOS transistor does not draw appreciable input current, temperature compensation is simpler than for the bipolar transistor. 30 J 0 ,mA 100 80 60 2SJV I 60 40 20 I4V 40 y 20 '/ I 2V I ov 8V ~ (b) 6 12 ·= ~s= 6 V 18 24 30 -.. / v I ___. 18V 7l 1---- - 12 / t.... J~ - 2ov 1-" I 6V 14V 40 12V IOV 20 " .

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