Download Electronics for Technicians by G. D. Bishop (auth.) PDF

By G. D. Bishop (auth.)

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One further feature of the MOSFET is its very high input impedance which is used to store charge and act as an electronic memory device in computers, thereby eliminating the large and expensive magnetic core memories. Large-signal and large-power amplification will continue to use bipolar transistors or valves, although recent technology has developed a high-power integrated circuit using a combination of bipolar and field-effect transistors to combine the advantages of each. 8, where a block of n-type material has two connections at either end: one called the source and the other called the drain.

Field-effect transistors (FETs) belong to this second family along with unijunction transistors , although the unijunction transistor is not an amplifying type of transistor; it is used merely as a switch in a similar way to the thyristor. There are many circuit applications where npn or pnp transistors are best suited; in a similar way there are many applications where FETs are best suited. ------;::::~11;::::==:~~1===:=Ff-----' I depletion ! 7 n -channel The field-effect transistor (FET) family basic operating principles of the FET in its two forms, and then simple amplifier circuits incorporating the junction-gate or the insulated -gate field-effect transistor (JUGFET and IGFET).

The distinction is similar, lower-case values describing the h-parameters for small signal conditions, capital subscripts describing static conditions in the network being measured. Transistors and transistor amplifiers normally use the lower-case values; these are described in chapter 3. c. signals whereas the input terminals are open circuit for h o and h. 5b where a voltage generator with output h r V 2 is placed across the input terminals in series with hi ; a current generator with output hfI I is placed across the output terminals in parallel with the output admittance h o ' Two circuit equations can be derived from this circuit VI = 12 = hi l hfIt from which a number of circuit properties can be estimated.

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