Download Applications and Devices Part B by R.K. Willardson and Albert C. Beer (Eds.) PDF

By R.K. Willardson and Albert C. Beer (Eds.)

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Example text

When the voltage across the space-charge region changes sinusoidally in time, the field in the avalanche region changes more or less in phase with the voltage. The carriers supplied by the avalanche process are appreciable when the avalanche field is above the breakdown field. The carrier injection reaches a peak not when the field peaks, but when the field falls to the breakdown value. The injected 412 T. MISAWA carriers drift across the space-charge region while the voltage goes through the lower half of the cycle.

This corresponds to the case designated by EL in Fig. 25. Another quarter cycle later, the electrons are disappearing and the field in the avalanche region starts to grow above the quiescent value. The amplitude of oscillation is relatively small here. The electron pulse has not yet sharpened as in Fig. 24 and no sign of bottoming of the field at the trailing edge is seen at time (3). Actually, the field is bottoming at the leading edge. 6 GHz with a voltage amplitude of 38 V. The efficiency is still sharply increasing with amplitude at this point.

28 as a function of frequency and ac voltage amplitude. Equiefficiency lines are also indicated. Current density is 200 A/cm2. 28) time (3), the electron bunch is half way into the drift region and the voltage is at its minimum. This corresponds to the case designated by EL in Fig. 25. Another quarter cycle later, the electrons are disappearing and the field in the avalanche region starts to grow above the quiescent value. The amplitude of oscillation is relatively small here. The electron pulse has not yet sharpened as in Fig.

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Download Applications and Devices Part B by R.K. Willardson and Albert C. Beer (Eds.) PDF
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